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| Jf]R IPB081N06L3 G IPP084N06L3 G "%&$!"# 3 Power-Transistor Features R #562 =@C 7 9:89 76BF6? 4J D 49:? 8 2 ? 5 D 4 C C H:E J? 64 R ) AE :K65 E :> 649? @= 7 4@? G E D @8J @C 6C 6C R I46= E E 492 C IR 9I"\[# AC = 82 6 6? 86 @5F4E ) ' R( 492 ? ? 6== @8:4 = 6= 6G R 2 G =? 496 E E 22 6D 65 R* 3 766 A=E 8 , @" - 4@> A= ? E C 2 :? :2 R+ F2 =:65 2 44@C 8 E $ :7 5:? @ )# TM Product Summary V 9I R - @? >2 I- ' I9 .( 0&) -( K Z" 6 7 E C 2 AA= E D @C 2 86E :42 :@? R" 2 = @86? 766 2 44@C 8 E # C 5:? @ Type #* ( & ! #* * ( & ! Package Marking F=%JE*.+%+ (0)D(.B F=%JE**(%+ (0,D(.B Maximum ratings, 2 E W U F? = D @E H:D D T 6D 96C 6 A64:7 :65 Parameter @? E F@FD 5C :? 4FC6? E :? 2 C Symbol Conditions I9 T 8 U *# Value -( -( *(( ,+ r*( Unit 6 T 8 U * F=65 5C :? 4FC6? E D 2 C +# G =? 496 6? 6C D 8= AF=6,# 22 8J :? 6 D !2 E D 46 G E 86 6 @FC @= 2 * @H6C D E 5:D :A2 :@? ) A6C E 8 2 ? 5 D @C 86 E A6C E 6 2 :? E2 6> 2 FC )# *# +# ,# I 9$]bYR E 6I V =I P a\a T W T aT T 8 U I 9 R =I " Z@ K L U T 8 U /1 $ - . 2 ? 5 $ - FC6? E = :E 3 J 3 @? 5H:C H:E 2 ? R aU@8 % 0 E 49:A :D 2 3 = E 42 CJ C :D :> 65 6 9 96 6@ C - 66 7 6 7 > @C 56E := :? 7 > 2 E :8FC @C 6 2 65 @C :@? - 66 7 6 7 > @C 56E := :? 7 > 2 E :8FC @C 6 2 65 @C :@? , 6G A2 86 IPB081N06L3 G IPP084N06L3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics .96C 2 = 6D E ? 46 ; 4E 42 D > C :D 2 F? :@? 6 .96C 2 = 6D E ? 46 > C :D 2 ; 4E 2 > 3 :6? E F? :@? R aU@8 R aU@6 > :? :> 2 =@@E :? E 7 AC 4> W 4@@= 8 2 C :? 62 -# % % % % )&1 ,( A'L Electrical characteristics, 2 E W U F? = D @E H:D D T 6D 96C 6 A64:7 :65 Static characteristics C :? D 46 3 C <5@H? G E 86 2 @FC 62 @= 2 !2 E E 6D 5 G E 86 6 9C 9@= @= 2 16C 82 E G E 86 5C :? 4FC6? E @ 6 @= 2 2 C V "7H#9II V =I / I 9 > V =I"aU# I 9II V 9I4V =I I 9 X V 9I / V =I / T W U V 9I / V =I / T W U !2 E @FC = <2 86 4FC6? E 6D 46 62 C C :? D 46 @? D 2 E C :D 2 ? 46 2 @FC E 6 6D E I =II R 9I"\[# V =I / V 9I / V =I / I 9 V =I / I 9 V =I / I 9 "IC9# V =I / I 9 "IC9# !2 E C :D 2 ? 46 6 6D E J_N[P\[QbPaN[PR R= g S hV 9Ih5*hI 9hR 9I"\[#ZNe I 9 .( )&* % % )&/ (&) % *&* ) t6 K % % % % )( ) /&( 1&/ )(( )(( 0&, ),&+ [6 Z" C :? D 46 @? D 2 E C :D 2 ? 46 2 @FC E 6 6D E R 9I"\[# % .&/ 0&) % % +- 1&, (&1 .1 ), % % " I -# 6G @? > > I > > I > > 6A@IJ * :46 4@? ? 64E * :D G E = D :=2 :C :@? 6C :42 :? E= , H:E 4>* @? 6 =J6C X> E 9 2 9:4< 4@AA6C C 7 5C :? 2 62 @C 2 , 6G A2 86 IPB081N06L3 G IPP084N06L3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics #? AFE A2 4:E ? 46 42 2 ) FE 42 A2 4:E ? 46 AFE 2 , 6G D E2 ? D 6C A2 4:E ? 46 6C6 C 7 42 2 .FC @? 56=J E 6 ? 2 :> , :D E 6 6 :> .FC @7 56=J E 6 ? 7 2 :> 2 =E 6 =:> !2 E 92 C 92 C 4E :D :4D.# 6 T6 2 6C E !2 E E D 46 492 C 6 @ @FC 86 !2 E E 5C :? 492 C 6@ 2 86 - H:E 8 492 C 49:? 86 !2 E 492 C E 2 = 6 86 @E !2 E A=E F G E 86 6 2 62 @= 2 ) FE 492 C AFE 86 Reverse Diode :@56 4@? E @FD 7 H2 C 4FC6? E :? @C 5 C :@56 AF=6 4FC6? E D C :@56 7 H2 C G E 86 @C 5 @= 2 , 6G D C 6C6 64@G J E 6 6C :> , 6G D C 6C6 64@G J 492 C 6C 86 .# C V C \ C _ t Q"\[# t_ t Q"\SS# tS V 99 / V =I / I 9 R = " V =I / V 9I / f ' " K % % % % % % % +/(( .1( +) )*. +/ / ,1(( 1*( % % % % % ]< [ Q T Q TQ Q d QT V ]YNaRNb Q \ V 99 / V =I / V 99 / I 9 V =I E / @ % % % % % % ), )* ** +&0 +, % % % *1 % ,- [8 K [8 II I I$]bYR V I9 t __ Q __ % T 8 U % V =I / I < T W U V H / I < Qi <'Qt XD % % % % % )&( ,( +1 -( *(( )&* % % 6 K [ [8 - 66 7 6 7 82 E 492 C A2 C > 6E 567 :E :8FC @C 6 86 2 6C :? :@? , 6G A2 86 IPB081N06L3 G IPP084N06L3 G 1 Power dissipation P a\a4S"T 8# 2 Drain current I 94S"T 8 V =I" / 100 90 60 50 80 70 40 60 P tot [W] 50 40 30 20 10 10 0 0 50 100 150 200 0 0 50 100 150 200 T C [C] I D [A] 30 20 T C [C] 3 Safe operating area I 94S"V 9I T 8 U D 4( A2 C > 6E t ] 2 6C 103 4 Max. transient thermal impedance Z aU@84S"t ]# A2 C > 6E D 4t ]'T 2 6C 101 = :E 3 J @? D 2 E :> 65 E6 _RVaN[PR XD XD 10 2 XD >D 100 (&- Z thJC [K/W] I D [A] (&* (&) (&((&(* -1 (&() 101 >D 98 10 100 D 8= AF=6 :? 6 D 10-1 10-1 100 101 102 10-2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] , 6G A2 86 IPB081N06L3 G IPP084N06L3 G 5 Typ. output characteristics I 94S"V 9I T W U A2 C > 6E V =I 2 6C 200 / / / / 6 Typ. drain-source on resistance R 9I"\[#4S"I 9 T W U A2 C > 6E V =I 2 6C 17 16 15 / / / / 180 160 14 140 13 120 / R DS(on) [m ] 12 11 10 9 / I D [A] 100 80 60 / 8 40 20 / / / / 7 6 5 0 1 2 3 4 5 0 50 100 150 0 200 V DS [V] I D [A] 7 Typ. transfer characteristics I 94S"V =I L 9Ih5*hI 9hR 9I"\[#ZNe V A2 C > 6E T W 2 6C 120 8 Typ. forward transconductance g S4S"I 9 T W U 100 100 80 80 60 60 g fs [S] 40 20 U U I D [A] 40 20 0 0 2 4 6 0 0 50 100 150 V GS [V] I D [A] , 6G A2 86 IPB081N06L3 G IPP084N06L3 G 9 Drain-source on-state resistance R 9I"\[#4S"T W I 9 V =I / 10 Typ. gate threshold voltage V =I"aU#4S"T W V =I4V 9I A2 C > 6E I 9 2 6C 20 18 3 2.5 16 14 2 R DS(on) [m ] 10 8 6 4 V GS(th) [V] 12 ZNe X 1.5 +,t6 af] 1 0.5 2 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C 4S"V 9I V =I / f ' " K 12 Forward characteristics of reverse diode I <4S"V I9# A2 C > 6E T W 2 6C 104 8V 103 103 8\ 102 U U U C [pF] 10 2 8_ I F [A] U 101 101 100 0 20 40 60 0 0.5 1 1.5 2 V DS [V] V SD [V] , 6G A2 86 IPB081N06L3 G IPP084N06L3 G 13 Avalanche characteristics I 6I4S"t 6K R =I " A2 C > 6E T W"aN_a# 2 6C 100 14 Typ. gate charge V =I4S"Q TNaR I 9 AF=65 D A2 C > 6E V 99 2 6C 10 / 8 / / U U U 6 10 V GS [V] 4 2 0 0.1 1 10 100 1000 0 10 20 30 40 50 I AS [A] 1 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V 7H"9II#4S"T W I 9 > 16 Gate charge waveforms 70 V =I Qg 65 V BR(DSS) [V] 60 V T "aU# 55 Q T "aU# Q T -60 -20 20 60 100 140 180 Q d Q TQ Q g ate 50 T j [C] , 6G A2 86 IPB081N06L3 G IPP084N06L3 G PG-TO220-3 , 6G A2 86 IPB081N06L3 G IPP084N06L3 G PG-TO263 (D-Pak) , 6G A2 86 IPB081N06L3 G IPP084N06L3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. , 6G A2 86 |
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